Product Review

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power Dissipation (Max):400mW (Ta)
Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3