Product Review

The FQP30N06L is a N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
Continuous Drain Current Id:32A
Drain Source Voltage Vds:60V
On Resistance Rds(on):0.027ohm
Rds(on) Test Voltage Vgs:10V
Threshold Voltage Vgs:2.5V
Power Dissipation Pd:79W
Transistor Case Style:TO-220AB
Operating Temperature Max:175°C
Minimum Operating Temperature:-55 °C
Package include
10pcs *FQP30N06L